smd type ic www.kexin.com.cn 1 smd type transistors silicon n-channel power mosfet 2SK3560 features low on-resistance, low qg high avalanche resistance for high-speed switching absolute maximum ratings ta = 25 parameter symbol rating unit drain-source surrender voltage v dss 230 v gate-source surrender voltage v gss 30 v drain current i d 30 a peak drain current i dp 120 a power dissipation ta = 25 3 power dissipation 50 channel temperature t ch 150 storage temperature t stg -55to+150 p d w 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source
www.kexin.com.cn 2 smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit gate-drain surrender voltage v dss i d =1ma,v gs =0 230 v diode forward voltage v dsf i dr =30a,v gs =0 -1.5 v gate threshold voltage v th v ds =25v,i d =1ma 2 4 v drain-source cutoff current i dss v ds =184v,v gs =0 100 a gate-source cutoff currentt i gss v gs = 30 v, v ds =0 1 a drain-source on resistance r ds(on) v gs =10v,i d = 15 a 55 74 m forward transfer admittance y fs v ds =25v,i d =15a 8 19 s short-circuit forward transfer capacitance c iss 2 330 pf short-circuit output capacitance c oss 356 pf reverse transfer capacitance c rss 44 pf turn-on delay time t d(on) v dd 100 v, i d =15a 39 ns rise time t r r l 6.7 , v gs =10v 37 ns turn-off delay time t d(off) 221 ns fall time t f 46 ns reverse recovery time t rr l = 230 h, v dd = 100 v 164 ns reverse recovery charge q rr i dr =15a,di/dt=100a/s 853 nc total gate charge q g v dd =100v,i d = 25 a 51.2 nc gate-source charge q gs v gs =10v 8.2 nc gate-drain charge q gd 19.4 nc channel-case heat resistance r th(ch-c) 2.5 /w channel-atmosphere heat resistance r th(ch-a) 89.2 /w v ds =25v,v gs =0,f=1mhz 2SK3560
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